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Insulated Gate Bipolar Transistors (IGBT) are widely used for the vehicle traction inverter. Switching characteristics of these devices contribute to the inverter total loss and inverter efficiency is affected by the energy loss during each switching event. Traditional gate driver circuits are usually designed to meet the worst-case scenario and result is high switching loss of the IGBTs. Gate driver turn on and turn off resistances are selected accordingly for the worst-case scenario and their purpose is to protect the device from overshoot voltage that can cause the avalanche breakdown of the device. The gate charge and discharge circuit is usually composed of one or two resistors and the loss during turn-on and turn-off time is not optimized for all of the vehicle-operating conditions. Since microprocessor (μP) monitors the dc-bus voltage, output current and torque command, it can also determine if the device switching speed needs to be changed under different operating conditions.

The IGBTs are dominantly used in traction inverters for automotive applications. Because the Si-based device technology is being pushed to its theoretical performance limit in such applications during recent years, the gate driver design is playing a more prominent role to further improve the traction inverter loss performance. The conventional gate driver design in traction inverter application needs to consider worst case scenarios which adversely limit the semiconductor devices' switching speed in its most frequent operation regions. Specifically, when selecting the gate resistors, the IGBT peak surge voltage induced by fast di/dt and stray inductance must be limited below the device rated voltage rating under any conditions. The worst cases considered include both highest dc bus voltage and maximum load current. However, the traction inverter operates mainly in low current regions and at bus voltage much lower than the worst case voltage.