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We have developed a novel wafer process for capacitive sensing accelerometer using surface Micro Electrical Mechanical Systems (MEMS) technology and successfully applied to the fabrication process. Our new process combines with a single crystal SOI (Si on Insulator) wafer, high aspect ratio silicon etching and newly developed anhydrous HF/Alcohol etch process of silicon oxides. Although wet conditions such as HF/water etch occurs stiction of mobile structure, our anhydrous HF/Alcohol etch process technology occurs no stiction of mobile structures, because of gas phase (dry) process. In our process, we have achieved smaller-sized sensor chip compared to our conventional 2 axes accelerometer.