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Electronic throttle systems are becoming more and more important in today's motor vehicles. These systems consist of: a throttle valve with an electrical actuator and a transmission a position feedback an electronic acceleration pedal an electronic control unit (ECU) a semiconductor h-bridge for driving the motor. The electronic acceleration pedal gives a set point to the ECU. A control signal is generated and moves the motor of the throttle valve with a semiconductor h-bridge to the requested position. The voltage drop of a potentiometer is used here as control feedback signal. The potentiometer in the throttle valve is moved very often and has a rough environment like high temperature and vibrations. Therefore this system has a lot of problems with mechanical attrition and reliability during the whole system lifetime. The accuracy of the position control decreases over time.

The objective of this SAE paper is to discuss a power stage partitioning which will provide a cost effective and flexible Infineon Technologies solution to control future E-Valve applications. To fulfil environmental demands, E-Valve applications will enable car manufacturers to: Dynamically reduce the number of working cylinders according to the drivers' torque requirements Have an efficient and variable control over the engine load in various conditions Dispense with throttles and exhaust recirculation valves The paper will describe: 1 The integration of the 4 MosFET and the future technology development required for the next system optimization. 2 Gate driver integration (3 different scenarios): Analog Interfacing between the μcontroller and the MosFETs with an integrated protection functionality (Scenario A).