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The GS450h requires higher system voltage to increase the motor output. For the insulated gate bipolar transistor (IGBT) that serves as the built-in switching device in the intelligent power module (IPM), higher voltage means greater loss and a larger device surface area, and it can also reduce the vehicle's fuel economy performance and increase its cost. To solve these issues, IGBT losses were reduced by (1) using a trench structure to make the IGBT more compact and (2) using a new structure in which the concentration of impurities in the drift layer is optimized. As a result, the device surface area was reduced by 10%, losses were reduced by 14%, and improved vehicle performance was achieved.

In order to improve the fuel efficiency of Hybrid Electric Vehicles (HEVs), it is necessary to reduce the size and power loss of the HEV Power Control Units (PCUs). The loss of power devices (IGBTs and FWDs) used in a PCU accounts for approximately 20% of electric power loss of an HEV. Therefore, it is important to reduce the power loss while size reduction of the power devices. In order to achieve the newly developed PCU target for compact-size vehicles, the development targets for the power device were to achieve low power loss equivalent to its previous generation while size reduction by 25%. The size reduction was achieved by developing a new RC-IGBT (Reverse Conducting IGBT) with an IGBT and a FWD integration. As for the power loss aggravation, which was a major issue due to this integration, we optimized some important parameters like the IGBT and FWD surface layout and backside FWD pattern.