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NASA’s Watts on the Moon Challenge is seeking solutions to transfer at least 1.065 kW power from a 120 V dc source to a 24-32 V dc load over a 3-km distance under the same environmental conditions as the Lunar surface (i.e., 77 K temperature and 1 mTorr pressure). The selected solution from the author’s team proposed utilizing two modular multilevel Gallium Nitride (GaN) based isolated dc-dc converters to connect the 120 V dc source with the 24-32 V dc load bank via 1.5 kV rated dc transmission lines. The modular multilevel converters feature frequency multiplication, high step-down voltage ratio and low device voltage stress. In the converters, GaN gate injection transistor (GaN GIT) and GaN High-Electron-Mobility Transistor (GaN HEMT) devices are chosen as switching devices, due to the merits of lower power loss, radiation hardness and ability to work under cryogenic and vacuum conditions.