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To improve the fuel economy and dynamic performance of hybrid electric vehicles (HVs), Toyota Motor Corporation has boosted the voltage of the hybrid system. Increases in system voltage have to be matched by increases in the breakdown voltage of the Free Wheeling Diodes (FWD) in that system. However, using conventional technology to accomplish this causes a temporary decrease in breakdown voltage during switching, leading to increased device losses. It was found that this phenomenon was being caused by the unexpected generation of crystal defects, the reduction of which has enabled device losses to be suppressed. (Reported at ISPSD 2006.)

The GS450h requires higher system voltage to increase the motor output. For the insulated gate bipolar transistor (IGBT) that serves as the built-in switching device in the intelligent power module (IPM), higher voltage means greater loss and a larger device surface area, and it can also reduce the vehicle's fuel economy performance and increase its cost. To solve these issues, IGBT losses were reduced by (1) using a trench structure to make the IGBT more compact and (2) using a new structure in which the concentration of impurities in the drift layer is optimized. As a result, the device surface area was reduced by 10%, losses were reduced by 14%, and improved vehicle performance was achieved.