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The High Pressure Oxidizer Turbine (HPOT) discharge temperature of the Space Shuttle Main Engine (SSME) was estimated using Radial Basis Function Neural Networks (RBFNN) during the startup transient. Estimation was performed for both nominal engine operation and during simulated input sensor failures. The K-means clustering algorithm was used on the data to determine the location of the basis function centers. The performance of the RBFNN is compared with that of a feedforward neural network trained with the Quickprop learning algorithm.

High voltage Schottky diodes have been fabricated on 3C-SiC films grown on Si substrates. A Ni metallization process has been developed to fabricate both rectifying and ohmic contacts to SiC by controlling the post-annealing temperature. A high voltage (>150V) breakdown has been obtained at room temperature from the SiC Schottky diode. The Ni-SiC Schottky junction shows a thermal resistance for temperatures as high as 600°C. This technology has good potential for monolithic integration of SiC high power devices and Si integrated circuits.

Electrically passive optical sensors have been formed using optical waveguides and micromachined-micromechanical structures on silicon substrates. We present recent results on an interferometric pressure sensor where pressure-induced strain in a micromachined diaphragm alters the path length of an optical channel waveguide ring resonator. Pressure is detected as a change in the resonant condition of the ring and found to vary linearly over a range of -100 to 400 kPa with a sensitivity of 0.0094 rad/kPa. Problems with attaching this sensor for testing will be discussed. Our second device is an intensity-type accelerometer utilizing a micromachined cantilever beam. Light transmission across a gap between two channel waveguides, one located on a beam bent by acceleration and another which remains fixed, is measured optically. We show preliminary measurements of the coupling between two closely spaced waveguide sections which agree with overlap integral calculations.

Joining of a PdCr Strain Gage with a Hastelloy X carrier shim to Inconel by a rapid infrared processing technique has been investigated at 1150 °C using a nickel based brazing alloy AMS 4777, Ni-7Cr-3Fe-3.2B-4.5Si-.06C in wt%. The effects of the infrared joining parameters on the joint and base material microstructure, joint shear strength, and delamination tendency of the PdCr gage was investigated. Results show that the joint shear strength is as high as 503 MPa when processed at approximately 1150 °C for 120 seconds. Microstructural examinations of the joint with both an optical microscope and a scanning electron microscope indicate that good wetting exists between the brazing alloy with both the Hastelloy X and Inconel 718. And, the Hastelloy X and Inconel 718 exhibits no noticeable change in microstructure due to the rapid processing cycle of the infrared heating process while the stabilized PdCr wire gage shows little change in resistance.