Search Results

Custom MOS has been around since the late 60's when it was used extensively by the military and some farseeing calculator manufacturers. ...In fact, custom MOS caused the calculator revolution and the development of microprocessors. The 8080 was an evolution from a custom processor. ...Custom MOS is a synergyism between the end product developer and the semiconductor technologist. It is a semiconductor product that is designed for a specific need.

Failure rates for the new device, large scale array (LSA ) metal-oxide-semiconductor (MOS) are obtained through use of this model. For the example described in this paper, extensive empirical bipolar IC postmortem analysis was analyzed, normalized and related to the commonalities of MOS technology. ...For the example described in this paper, extensive empirical bipolar IC postmortem analysis was analyzed, normalized and related to the commonalities of MOS technology. The failure mechanisms were grouped into the following major defect categories: (1) passivation, (2) metallization, (3) leads, (4) diffusion, (5) die bonding, (6) foreign material, (7) packaging, (8) contamination, and (9) material discrepancies. ...A transfer model was then established to estimate the percent of the failure mode applicable to the MOS device along with the justification. The result of the completed transfer model enables a reliability prediction to be made by summing the contributions of each major failure mechanism based on the applicable areas and number of leads.

FABRICATION AND TESTING OF COMPLEX MOS large scale integrated circuitry is changing as the semiconductor industry positions itself for the next generation.

For the purpose of improving vehicle fuel efficiency, it is necessary to reduce energy loss in the alternator. We have lowered the resistance of the rectifying device and connecting components, and control the rectifying device with an IC to reduce rectification loss. For the package design, we have changed the structure of the part on which the rectifying device is mounted into a high heat dissipation type. The new structure has enabled optimizing the size of the rectifying device, resulting in the reduction of size of the package. In addition, the rectifying device is mounted using a new soldering material and a new process, which has improved the reliability of the connection. Moreover, since the alternator has introduced a new system, the controller IC has a function for preventing malfunction of the rectifying device and a function for detecting abnormalities, in order to ensure safety.

The Mos Controlled Thyristor (MCT) is a very promising switch device which combines the high power capability of thyristors and the low energy gate control of a MOS device. ...The Mos Controlled Thyristor (MCT) is a very promising switch device which combines the high power capability of thyristors and the low energy gate control of a MOS device. The MCT has high voltage and high current capabilities and its power dissipation depends on the losses due to turn-on, turn-off and conduction.

The exponent is 1.8 for today's transistors and will be about 2.0 for next generation power MOS power transistors. This dependence results in a relatively small reduction in transistor power dissipation with increasing battery voltage for today's MOS power transistors and no change for the next generation devices. ...This dependence results in a relatively small reduction in transistor power dissipation with increasing battery voltage for today's MOS power transistors and no change for the next generation devices. Reducing the safety margin (ratio of breakdown voltage to battery voltage) will significantly reduce power dissipation for all battery voltages but requires regulation of the power bus voltage to protect the transistor from overvoltage.

This paper describes the potential of indirect liquid cooling to remove the waste heat generated while a MOS controlled thyristor (MCT) is operating at various power levels and switching frequencies. An MCT is mounted on a copper heat exchanger which is capable of removing up to 50 W of heat while maintaining the case temperature of the MCT below 50°C.

Emphasis is placed on the module operating environment, selection of complementary MOS as a design medium, various stages of required logic implementation, and dynamic testing methods.

While the MOS microprocessor chip has been used as a cost effective electronic building block for simultaneously meeting the goals of fuel management, emissions and reliability, it has also created the need for additional interface electronics. ...Interface circuits are necessary to buffer and protect the sensitive MOS circuitry from the loading and electrical transients of mechanical switches, sensors, solenoids and indicators.

We fabricated MOS diodes using thermal oxidation and measured their lifetimes by TDDB (Time Dependent Dielectric Breakdown) measurement. ...The wear-out lifetime is sufficient for hybrid vehicle but many MOS diodes broke in shorter time. The breakdown points were defined by Photo-emission method. Finally, we classified the defects by TEM (Transmission Electron Microscopy).

This paper will use the Mostek MK3870 family of Microcomputers to illustrate the sophistication of “State of the Art” MOS LSI and automotive applications of this technology.

The topics covered will include the history and evolution of the 3043 family from N-Channel MOS to P 2 CMOS, the technology which makes it possible, and the special features of the NS530CX48 compared to the standard 30C43 with some systems examples in automative applications.

The single-chip microcomputer is coming into its own as the state-of-the-art is MOS integrated circuit design advances. LSI technology made possible the original single-chip microcomputers and VLSI technology is bringing about a revolution in single-chip microcomputer capability.

Speed control is based on PWM and power MOS FETs. Fundamental problems peculiar to this method such as audible noise generation, R.F. noise generation, starting torque reduction, and speed drift due to load variation have been solved.

Silicon processing facilities provide fabrication of standard cell or gate array designs based on state-of-the-art MOS processes.

Two new product innovations, one combining MOS and bipolar technology to produce a high performance and versatile operational amplifier integrated circuit, and the other an inherently more reliable process for IC manufacture involving a hermetic silicon die and a corrosion resistant lead connection system are also described, particularly as they relate to automotive applications.

This paper will examine the requirements of the new automotive “relay” and describe three semiconductor technologies - bipolar, power MOS and smart power - that are being used to provide the power-to-load interface for present and future automobiles.

This paper updates the reader on selected SiC power devices (including the MOS Turn-Off Thyristor (MTO™)) for use in rugged, high power, 500°C operation which will result in significant reduction of cooling requirements.

This technology could be used to integrate 0.8um CMOS transistors as digital devices, DMOS (Double diffused MOS) transistors as power devices, high breakdown voltage bipolar transistors as analog devices, and to create thin film resistors for high precision resistance, which could be trimmed using a laser.